Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's

Authors
Mateos, J Gonzalez, T Pardo, D Hoel, V Happy, H Cappy, A
Citation
J. Mateos et al., Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's, IEEE DEVICE, 47(1), 2000, pp. 250-253
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
47
Issue
1
Year of publication
2000
Pages
250 - 253
Database
ISI
SICI code
0018-9383(200001)47:1<250:IMCAFT>2.0.ZU;2-9
Abstract
A classical Monte Carlo (MC) device simulation has been modified to locally introduce the effects of electron degeneracy and nonequilibrium screening. Its validity in the case of AlInAs/GaInAs HEMT's has been checked through the comparison, first, with a quantum Schrodinger-Poisson (SP) simulation i n the case of a complicated layer structure, which is actually used in the fabrication of real devices, and second, with experimental results of stati c characteristics of recessed delta-doped HEMT's.