Pseudo-gap features of intrinsic tunneling in (HgBr2)-Bi2212 single crystals

Citation
A. Yurgens et al., Pseudo-gap features of intrinsic tunneling in (HgBr2)-Bi2212 single crystals, INT J MOD B, 13(29-31), 1999, pp. 3758-3763
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN journal
02179792 → ACNP
Volume
13
Issue
29-31
Year of publication
1999
Pages
3758 - 3763
Database
ISI
SICI code
0217-9792(199912)13:29-31<3758:PFOITI>2.0.ZU;2-P
Abstract
The c-axis tunneling properties of both pristine Bi2212 and its HgBr2 inter calate have been measured in the temperature range 4.2 - 250 K. Lithographi cally patterned 7-10 unit-cell heigh mesa structures on the surfaces of the se single crystals were investigated. Clear SIS-like tunneling curves for c urrent applied in the c-axis direction have been observed. The dynamic cond uctance dI/dV(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, whic h persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting t hat a coupling between CuO2-bilayers has little effect on the pseudogap.