Observation of fine structure in the photoluminescence spectrum of an Er3+ion in an amorphous silicon matrix

Authors
Andreev, AA Golubev, VG Medvedev, AV Pevtsov, AB Feoktistov, NA Masterov, VF Aldabergenova, SB Taylor, PC
Citation
Aa. Andreev et al., Observation of fine structure in the photoluminescence spectrum of an Er3+ion in an amorphous silicon matrix, JETP LETTER, 70(12), 1999, pp. 797-800
Citations number
14
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
70
Issue
12
Year of publication
1999
Pages
797 - 800
Database
ISI
SICI code
0021-3640(199912)70:12<797:OOFSIT>2.0.ZU;2-Y
Abstract
A multicomponent Stark structure corresponding to a 4I(13/2)--> 4I(15/2) tr ansition in the 4f(11) shell of Er3+ ions is observed in hydrogenated amorp hous silicon (a-Si:H subjected to low-temperature (150 degrees C) anneal. T he observation of narrow, strong components indicates that the erbium ions form a highly ordered local surrounding (Er-O-Si nanoclusters) in the labil e, disordered structural network of a-Si:H. (C) 1999 American Institute of Physics. [S0021- 3640(99)00324-2].