Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells

The Si-doped low-temperature (LT) grown GaAs and GaAs/AlGaAs multiple quant um well(MQW) structures have been studied by photoluminescence (PL) spectro scopy. The samples were grown at 320 degrees C with different As pressures, then subjected to rapid thermal annealing from 500 to 900 degrees C. Besid es the band-edge PL feature from the band-band recombination, a defect-rela ted PL feature has also been observed in both GaAs and GaAs/AlGaAs MQW stru ctures. Deep-level transient spectroscopy measurement shows that the As ant isite-like defects exist in the as-grown and 600 degrees C-annealed Si-dope d LT-grown GaAs. The different annealing temperature dependence of the band -edge PL feature in two kinds of materials is observed and discussed. The d efect-related PL feature may be related to the defect complex consisting of Si and As atoms. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 78.55.Cr; 61.72.Cc; 71.55.Eq; 61.72.Vv.