Optical and electrical properties of transparent conducting In2O3-ZrO2 films

The optical transparencies and electrical conductivities of thin films of I n2O3 mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium- zirconium oxide films with a ZrO2 content up to a 15 wt% were conducting an d more than 80% transparent from 450 to 700 nm. As the ZrO2 content increas ed from 0 to 15 wt%, the electrical resistivities increased from 1.28 x 10( -3) to 6.48 x 10(-2) n cm, the carrier densities were decreased from 2.14 x 10(20) to 1.0 x 10(18)/cm(3), and the Hall mobilities decreased from 21 to 5 cm(2) V-1 s(-1), all monotonically.