Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates

Authors
Hirose, S Yoshida, A Yamaura, M Kano, N Munekata, H
Citation
S. Hirose et al., Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates, J MAT S-M E, 11(1), 2000, pp. 7-10
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
11
Issue
1
Year of publication
2000
Pages
7 - 10
Database
ISI
SICI code
0957-4522(200002)11:1<7:COCIIA>2.0.ZU;2-S
Abstract
We demonstrate a method for successfully controlling carbon incorporation i n AlAs layers grown by atomic layer epitaxy (ALE) using various GaAs substr ates with different orientations. The number of alkyl radicals attached to an Al atom at the surface, which is a main factor in carbon incorporation, can be intentionally controlled by changing substrate orientation. We found that the carbon incorporation in ALE-AlAs using the (3 1 1)B surface is 2 x 10(17) cm(-3), which is the lowest value ever reported for ALE-AlAs that satisfies one-monolayer self-limiting growth conditions.