Electrical resistivity anisotropy in layered p-SnSe single crystals

Authors
Agarwal, A Vashi, MN Lakshminarayana, D Batra, NM
Citation
A. Agarwal et al., Electrical resistivity anisotropy in layered p-SnSe single crystals, J MAT S-M E, 11(1), 2000, pp. 67-71
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
11
Issue
1
Year of publication
2000
Pages
67 - 71
Database
ISI
SICI code
0957-4522(200002)11:1<67:ERAILP>2.0.ZU;2-6
Abstract
Single crystals of p-type SnSe were grown by both direct vapor transport (D VT) and chemical vapor transport (CVT) techniques. The d.c. electrical resi stivity anisotropy has been investigated for the first time in these layere d crystals. The DVT grown crystals exhibited a large anisotropy ratio and a lso a higher activation energy compared to that of CVT grown crystals. The electron microscopic examination revealed the presence of a large concentra tion of stacking faults in the DVT grown crystals. The resistivity anisotro py is accordingly discussed in terms of stacking disorder.