Density of impurity states and donor-related optical absorption spectra ofGaAs-(Ga,Al)As semiconductor heterostructures

A variational procedure in the effective-mass approximation was used in the study of both the density of donor states and the associated optical absor ption spectra of GaAs-(Ga,Al)As semiconductor heterostructures. Calculation s were performed for a finite, cylindrical-shaped quantum box of GaAs withi n the infinite-barrier approximation and considering an homogeneous distrib ution of impurities within the low-dimensional heterostructure. Theoretical results for the density of impurity states and donor-related optical absor ption spectra were found to be in good agreement with previous studies in t he Limiting cases of quantum wells and quantum-well wires.