The possibilities for substitution of several contact pre-deposition proced
ures by one technological step have been investigated with the aim of impro
ving solar cell performance and reduction of the corresponding production c
ost. Growth of a low-resistance buffer layer on the surface of a CdTe based
solar cell is interesting not only from a:practical point of view but also
concerning the structural and compositional changes introduced in the CdS-
CdTe heterostructures. Information about the electrical properties of the l
ayers involved is presented and discussed with respect to the further exten
sion of this method.