Investigations of a buffer layer grown on a CdTe surface

Citation
R. Stefanov et al., Investigations of a buffer layer grown on a CdTe surface, J PHYS-COND, 11(49), 1999, pp. 10003-10006
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
49
Year of publication
1999
Pages
10003 - 10006
Database
ISI
SICI code
0953-8984(199912)11:49<10003:IOABLG>2.0.ZU;2-W
Abstract
The possibilities for substitution of several contact pre-deposition proced ures by one technological step have been investigated with the aim of impro ving solar cell performance and reduction of the corresponding production c ost. Growth of a low-resistance buffer layer on the surface of a CdTe based solar cell is interesting not only from a:practical point of view but also concerning the structural and compositional changes introduced in the CdS- CdTe heterostructures. Information about the electrical properties of the l ayers involved is presented and discussed with respect to the further exten sion of this method.