We present an investigation on the fabrication of synthetic diamond based p
hoton detectors. These devices are made by depositing small gap interdigita
ted contacts on polycrystalline diamond films grown by Microwave Plasma Enh
anced Chemical Vapour Deposition. Gold interdigitated contacts were deposit
ed on the typically rough surface of these films by using both wet etching
and unconventional lift-off lithographic precesses. These detectors were te
sted through X-ray irradiation in order to compare their potentialities in
obtaining higher performance diamond photoconductive detectors. A better re
solution was observed in samples obtained through the lift-off process. In
particular for these samples the gap between electrodes could be kept very
small and of the order of the grain size, giving higher response due the lo
wer contribution of grain boundary effects.