Determination of the electron-hole pair creation energy for semiconductorsfrom the spectral responsivity of photodiodes

Ionizing radiation can be detected by the measurement of the charge carrier s produced in a detector. The improved semiconductor technology now allows detectors operating near the physical limits of the detector materials to b e designed. The mean energy required for producing an electron-hole pair, W , is a material property of the semiconductor. Here, the determination of I W from the spectral responsivity of photodiodes is demonstrated. Using spe ctrally dispersed synchrotron radiation, different types of semiconductor p hotodiodes have been examined in the UV-, VUV-, and soft X-ray spectral ran ge. Their spectral responsivity was determined with relative uncertainties between 0.4% and 1% using a cryogenic electrical-substitution radiometer as primary detector standard. Results are presented for silicon n-on-p juncti on photodiodes and for GaAsP/Au Schottky diodes at room temperature. The in vestigations for silicon covered the complete spectral range from 3 to 1500 eV, yielding a constant value W = (3.66 +/- 0.03) eV for photon energies a bove 50 eV, a maximum value of W = 4.4 eV at photon energies around 6 eV, a nd a linear relation W = hv (one electron per photon) for photon energies b elow 4 eV. For GaAsP, we obtained a constant value of W = 4.58 eV in the ph oton energy range from 150 to 1500 eV, with a relative uncertainty of 1-3%, depending on the photon energy. (C) 2000 Elsevier Science B.V. All rights reserved.