Six semiconductor detectors (Si(Li) and HPGe) are calibrated in the 1-10 ke
V energy range by means of tuneable monochromatised synchrotron radiation.
Significant improvement in the quality of the response is observed in very
recent detectors. A peak shape calibration is established using a modified
Hypermet-type function to model the detector response for each energy step;
electron effects induce individual background and tail shapes for each det
ector material. Fano factors for both semiconductor materials are experimen
tally derived. The efficiency calibration is determined using a proportiona
l counter as reference: the front semiconductor layer acts as a partially a
ctive zone. (C) 2000 Elsevier Science B.V. All rights reserved.