Study of edge effects in the breakdown process of p(+) on n-bulk silicon diodes

Authors
Militaru, O Borrello, L Bozzi, C Da Rold, M Dell'Orso, R Dutta, S Messineo, A Mihul, A Tonelli, G Verdini, PG Wheadon, R Xie, Z
Citation
O. Militaru et al., Study of edge effects in the breakdown process of p(+) on n-bulk silicon diodes, NUCL INST A, 439(2-3), 2000, pp. 262-269
Citations number
15
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
439
Issue
2-3
Year of publication
2000
Pages
262 - 269
Database
ISI
SICI code
0168-9002(20000111)439:2-3<262:SOEEIT>2.0.ZU;2-3
Abstract
The pager describes the role of the n(+) edge implants in the breakdown pro cess of p(+) on n-bulk silicon diodes. Laboratory measurements and simulati on studies are presented on a series of test structures aimed at an optimiz ation of the design in the edge region. The dependence of the breakdown vol tage on the geometrical parameters of the devices is discussed in detail. D esign rules are extracted for the use of n(+)-layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8 x 10( 15) cm(-2). (C) 2000 Elsevier Science B.V. All rights reserved.