TCAD optimization of charge collection efficiency in silicon microstrip detectors

In this paper, numerical analysis techniques are applied to the study of mi crostrip silicon detectors exploited in the field of high-energy physics. A t high luminosity required by future experiments, radiation hardness of suc h device becomes a critical issue. The adoption of relatively low-resistivi ty substrates has been suggested as a key to face such a problem: simulatio ns have been carried out to verify this assumption. Comparisons have been m ade in terms of depletion voltage, as well as of charge-collection efficien cy, by exploiting some of the features of a customized simulation environme nt. Estimated, long-term radiation hardness of low-resistivity detectors fa vorably compares with high-resistivity ones. (C) 2000 Elsevier Science B.V. All rights reserved.