I. Pintilie et al., Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents, NUCL INST A, 439(2-3), 2000, pp. 303-309
The trapping levels induced in p-n Si junctions by irradiation with 24 GeV
proton were investigated using Thermally Stimulated Currents (TSC) methods
in the 90-300 K temperature range. Several trapping levels, with activation
energies between 0.27 and 0.57 eV, were put into evidence. The spatial dis
tribution of the traps was investigated using different wavelengths for the
light used to fill the traps. The results lead to the conclusion that the
deepest trapping levels are not uniformly distributed in the volume of the
sample. For the most important trapping level the average introduction rate
was estimated to 0.9-1.2 cm(-1). The activation energy and the capture cro
ss-section of this trapping level seems to depend on the impurity element i
ntroduced in Si. (C) 2000 Elsevier Science B.V. All rights reserved.