Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes

In this paper, the correlation between the microscopic damage parameters an d the macroscopic device performance degradation is investigated for 10 MeV proton-irradiated Float-Zone (FZ) silicon diodes, with n- and p-type dopin g density in the 10(14) cm(-3) range. It is shown that the radiation-induce d deep-level concentrations, obtained from deep-level transient spectroscop y show a proportional increase with the proton fluence, for the dominant tr aps and this both in n- and p-type substrates. The same applies for the inc rease in the reverse diode current and the reduction of the inverse carrier recombination lifetime. The obtained spectroscopic information is substitu ted in the Shockley-Read-Hall model for the diode reverse current and recom bination Lifetime. From the comparison between calculated and measured para meters, It is concluded that in proton-irradiated diodes fabricated in FZ p - and n-type substrates, the divacancy related deep-level centres at E-c - 0.42 eV play a dominant role in both the generation and the recombination l ifetime. (C) 2000 Elsevier Science B.V. All rights reserved.