A very large-area (6.75 x 8 cm(2)) silicon drift detector with integrated h
igh-voltage divider has been designed, produced and fully characterised in
the laboratory by means of ad hoc designed MOS injection electrodes. The de
tector is of the "butterfly" type, the sensitive area being subdivided into
two regions with a maximum drift length of 3.3 cm. The device was also tes
ted in a pion beam (at the CERN PS) tagged by means of a microstrip detecto
r telescope. Bipolar VLSI front-end cells featuring a noise of 250 e(-) rms
at 0 pF with a slope of 40 e(-)/pF have been used to read out the signals.
The detector showed an excellent stability and featured the expected chara
cteristics. Some preliminary results will be presented. (C) 2000 Elsevier S
cience B.V. All rights reserved.