We studied the response of high-resistivity MOS CCDs to monochromatic X-ray
illumination at energies ranging from 1.47 to 5.9 keV and discovered a new
feature in the low-energy tail of the response function. We attribute it t
o the photons interacting in the gate insulator and explain the shape of th
e entire low-energy tail assuming that it is formed by electron charge clou
ds partially formed in the gate oxide. The size of the charge clouds derive
d from this model is much smaller than previously reported. This can be exp
lained by a different field distribution in a buried channel CCD. (C) 2000
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