Maximum concentration of implanted projectiles during ion sputtering

Authors
Kudriavtsev, Y
Citation
Y. Kudriavtsev, Maximum concentration of implanted projectiles during ion sputtering, NUCL INST B, 160(2), 2000, pp. 307-310
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
160
Issue
2
Year of publication
2000
Pages
307 - 310
Database
ISI
SICI code
0168-583X(200002)160:2<307:MCOIPD>2.0.ZU;2-3
Abstract
Implantation of primary ions during surface sputtering was considered. A si mple equation for maximum concentration of implanted projectiles was develo ped. Several practical applications were performed with use of developed eq uation. (C) 2000 Elsevier Science B.V. All rights reserved.