Spin-polarized transport and Andreev reflection in semiconductor/superconductor hybrid structures

Citation
I. Zutic et S. Das Sarma, Spin-polarized transport and Andreev reflection in semiconductor/superconductor hybrid structures, PHYS REV B, 60(24), 1999, pp. R16322-R16325
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
24
Year of publication
1999
Pages
R16322 - R16325
Database
ISI
SICI code
0163-1829(199912)60:24<R16322:STAARI>2.0.ZU;2-D
Abstract
We show that spin-polarized electron transmission across semiconductor/supe rconductor (Sm/S) hybrid structures depends sensitively on the degree of sp in polarization as well as the strengths of potential and spin-flip scatter ing at the interface. We demonstrate that increasing the Fermi velocity mis match in the Sm and S regions can lead to enhanced junction transparency in the presence of spin polarization. We find that the Andreev reflection amp litude at the superconducting gap energy is a robust measure of the spin po larization magnitude, being independent of the strengths of potential and s pin-flip scattering and the Fermi velocity of the superconductor. [S0163-18 29(99)50248-8].