Structure and electronic properties of amorphous WO3

Citation
Ga. De Wijs et Ra. De Groot, Structure and electronic properties of amorphous WO3, PHYS REV B, 60(24), 1999, pp. 16463-16474
Citations number
41
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
24
Year of publication
1999
Pages
16463 - 16474
Database
ISI
SICI code
0163-1829(199912)60:24<16463:SAEPOA>2.0.ZU;2-8
Abstract
The structure and electronic structure of amorphous WO3 were studied with f irst-principles density functional calculations. Upon amorphization, a larg e increase of the band gap is observed. The empty states exhibit a tendency towards localization. We studied the filling of these states as induced by addition of an alkali metal (Na) or removal (''deficiency'') of O. Na addi tion does not affect the structure much, and results in a filling of the lo wer part of the conduction-band continuum. Oxygen removal can induce large structural relaxations, which can give rise to the formation of W-W dimers (bond length <3.0 Angstrom) and corresponding in-gap states. We suggest a r einterpretation of the nature of the active species in the intervalence cha rge transfer mechanism that is believed to explain the electrochromic behav ior of thin-film amorphous tungsten bronzes. [S0163-1829(99)12847-9].