Ultrafast decay of coherent plasmon-phonon coupled modes in highly doped GaAs

Citation
M. Hase et al., Ultrafast decay of coherent plasmon-phonon coupled modes in highly doped GaAs, PHYS REV B, 60(24), 1999, pp. 16526-16530
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
24
Year of publication
1999
Pages
16526 - 16530
Database
ISI
SICI code
0163-1829(199912)60:24<16526:UDOCPC>2.0.ZU;2-R
Abstract
We report on the ultrafast decay of coherently excited plasmon-phonon coupl ed modes in a highly doped n-GaAs. Coherent oscillations of the upper branc h (L+) as well as the lower branch (L-) of the coupled modes have been obse rved by a femtosecond pump-probe technique with 20 fs ultrashort laser puls es. The decay time of the L+ mode estimated from a time partitioning Fourie r transform spectra reveals that the decay rate increases Linearly with inc reasing photoexcited carrier density. This result leads to a conclusion tha t the ultrafast decay of the coherent L+ mode is mainly caused by loss of c oherence in electron-hole plasmas when the photoexcited carrier density is higher than doping levels. [S0163-1829(99)01048-6].