Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface

We investigate the beta-SiC(100) c(4x2) surface reconstruction by Si 2p cor e-level photoemission spectroscopy using synchrotron radiation at various p hoton energies. We identify two surface shifted components that are related to the up and down dimers (AUDD) of the c(4X2) reconstruction. The large b inding energy difference (0.9 eV) between these two surface shifted compone nts indicates that the up and down dimers have significantly different elec tronic status. In addition, two subsurface components, with one of them hav ing a large bulklike character, are also identified. This indicates that th e subsurface region is also significantly affected by stress far from the o uter surface, suggesting the long-range influence of the latter. [s0163-182 9(99)04447-1].