Atomic view of Ge on the monohydride Si(001)-(2 x 1) surface

The adsorption and growth of Ge on monohydride the Si(001)-(2 x 1) surface was studied with scanning tunneling microscopy. We observed that Ge monomer s are stable at three adsorption sites and that the diffusivity of Ge adato m is reduced relative to on the bare surface, as suggested by the recent fi rst-principle calculation. With the surfactant effect of hydrogen, we were able to grow flat Ge overlayers by preventing the growth of hut cluster bey ond the known critical thickness. The etching effect of hydrogen on the Ge overlayer was observed. [S0163-1829(99)12147-7].