Optical investigations of individual InAs quantum dots: Level splittings of exciton complexes

We have investigated individual InAs quantum dots embedded in GaAs using ph otoluminescence spectroscopy as a function of temperature and excitation po wer density. We also present k.p calculations including both direct and exc hange interactions for systems with up to three excitons in the dot. From t hese calculations we are able to assign some of the many peaks observed to various few-particle states. A rate-equation model has also been developed which allows simulations of the peak intensities with excitation power dens ity to be made and compared with experiment. [S0163-1829(99)04548-8].