Resonant Raman scattering in self-assembled quantum dots

A theoretical treatment for first-order resonant Raman scattering in self-a ssembled quantum dots (SAQD's) of different materials is presented. The dot s are modeled as cylindrical disks with elliptical cross section, to simula te shape and confinement anisotropies obtained from the SAQD growth conditi ons. Coulomb interaction between electron and hole is considered in an enve lope function Hamiltonian approach and the eigenvalues and eigenfunctions a re obtained by a matrix diagonalization technique. By including excitonic i ntermediate states in the Raman process, the scattering efficiency and cros s section are calculated for long-range Frohlich exciton-phonon interaction . The Frohlich interaction in the SAQD is considered in an approach in whic h both the mechanical and electrostatic matching boundary conditions an ful filled at the SAQD interfaces. Exciton and confined phonon selection rules are derived for Raman processes. Characteristic results for SAQD's are pres ented, including InAs dots in GaAs, as well as CdSe dots in ZnSe substrates . We analyze how Raman spectroscopy would give information on carrier masse s, confinement anisotropy effects, and SAQD geometry. [S0163-1829(99)16847- 4].