The electrostatic interaction between two capacitively coupled metal double
-dots is studied at low temperatures. Experiments show that when the Coulom
b blockade is lifted by applying appropriate gate biases to both double-dot
s, the conductance through each double-dot becomes significantly lower than
when only one double-dot is conducting. A master equation is derived for t
he system and the results obtained agree well with the experimental data. T
he model suggests that the conductance lowering in each double-dot is cause
d by a single-electron tunneling in the other double-dot. Here, each double
-dot responds to the instantaneous, rather than average, potentials on the
other double-dot. This leads to correlated electron motion within the syste
m, where the position of a single electron in one double-dot controls the t
unneling rate through the other double-dot. [S0163-1829(99)16347-1].