The properties of a recently discovered photoluminescence recombination pro
cess, involving negatively charged donor ions (D-) in GaAs, are investigate
d in the presence of magnetic fields. The binding energies of both D- singl
et and triplet states are determined with high accuracy between 0 and 15 T.
This constitutes the first conclusive evidence for the presence of D- trip
let states in this system and enables existing calculations of the singlet
and triplet binding energies to be tested over this wide range of field val
ues. [S0163-1829(99)06147-0].