Optical polarization grating in semiconductors induced by exciton polaritons

Citation
Av. Kavokin et al., Optical polarization grating in semiconductors induced by exciton polaritons, PHYS REV B, 60(23), 1999, pp. 15554-15557
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
23
Year of publication
1999
Pages
15554 - 15557
Database
ISI
SICI code
0163-1829(199912)60:23<15554:OPGISI>2.0.ZU;2-0
Abstract
A scattering-state approach is proposed to study the propagation of extreme ly short optical pulses through semiconductor heterostructures. The formali sm is applied to the propagation of exciton polaritons: Our simulated exper iments predict the formation of an exciton-induced polarization grating whe n the light pulse is resonant with the excitonic transition, and suggest pr oper physical conditions for its experimental detection. Moreover, our anal ysis of the polariton transport in thick semiconductor layers reveals a dec rease of the average polariton group velocity as a function of time, which we ascribe to a re-emission-reabsorption of light by excitons. [S0163-1829( 99)01043-7].