Polarized optical reflectance and electronic band structure of alpha '-NaV2O5

Citation
Vc. Long et al., Polarized optical reflectance and electronic band structure of alpha '-NaV2O5, PHYS REV B, 60(23), 1999, pp. 15721-15727
Citations number
60
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
23
Year of publication
1999
Pages
15721 - 15727
Database
ISI
SICI code
0163-1829(199912)60:23<15721:PORAEB>2.0.ZU;2-N
Abstract
We report polarized optical reflectance studies of alpha'-NaV2O5 between 0. 5 and 6 eV as a function of temperature (T) and magnetic field (H). The ele ctronic excitations and their polarization dependence are interpreted accor ding to our extended Huckel tight-binding polarized band structure calculat ions. Strong bands near 1 eV in both chain and rung directions are attribut ed to V did transitions. Charge transfer excitations are estimated to begin near 3.3 eV and have significant strength at 4.4 eV and above. The reflect ance ratios, Delta R(T)=R(T)/R(T=4 K), measured at H=0 and 28 T, reveal bro ad polarization-dependent changes through the low temperature transition, T -c. Integrated intensities of Delta R features exhibit a second-order trans ition at 36 K in zero field and at 33+/-1 K in high field, consistent with a spin-Peierls aspect to the phase transition. [S0163-1829(99)06347-X].