Impurity resistivity of the double-donor system Si : P,Bi

The electrical resistivity of the shallow double-donor system Si:P,Bi, prep ared by ion implantation, was investigated in the temperature range from 1. 7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same t emperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was f ound to lie between the critical concentrations of the two single-doped sys tems, Si:P and Si:Bi. [S0163-1829(99)11747-8].