Infrared and Raman spectroscopic study of Zn1-xMnxSe materials grown by molecular-beam epitaxy

Molecular beam epitaxy and optical investigation of Zn1-xMnxSe epilayers ov er a large composition range (x = 0 - 0.78), grown on GaAs (001) substrates , are reported. The far-infrared (FIR) reflectance and Raman scattering wer e performed to characterize the film quality and study their optical and el ectrical properties. FIR and Raman data provide experimental evidence on th e intermediate-mode phonon behavior for Zn1-xMnxSe with x up to 0.78. Theor etical modeling fits of FIR spectra lead to the determination of optical pa rameters such as mode frequency, strength, damping constant, and electrical properties of dielectric constant, carrier concentration, mobility, conduc tivity, and effect mass, and their dependence on the Mn composition. Values of force constants of F-MnSe = 17.1 x 10(4) dyn cm(1) and F-ZnSe = 14.7 x 10(4) dyn cm(-1), and the high-frequency limit dielectric constant of MnSe, epsilon(infinity) = 5.4, are obtained. [S0163-1829(99)07147-7].