Electronic structure and electrical properties of amorphous OsO2

The valence-band spectrum of an amorphous OsO2 film deposited by glow disch arge of OsO4 vapor can be predicted well with calculated electronic band st ructure of crystalline OsO2 from first principles using the liner-muffin-ti n-orbital method with the local-density approximation. Resistivity of the a morphous OsO2 was less than 6X10(-3) Omega cm at 80 K, and it was almost te mperature independent, but the temperature coefficient of resistivity was n egative. The Hall coefficient of the amorphous OsO2 increased with temperat ure, and was saturated at around 220 K. Temperature dependence of the Hall mobility was proportional to T-3/2, and it implies that the scattering of c harged carriers by ionized atoms is dominant below 220 K. [S0163-1829(99)04 817-1].