Photoelectron escape depth and inelastic secondaries in high-temperature superconductors

Citation
Mr. Norman et al., Photoelectron escape depth and inelastic secondaries in high-temperature superconductors, PHYS REV B, 59(17), 1999, pp. 11191-11192
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
17
Year of publication
1999
Pages
11191 - 11192
Database
ISI
SICI code
0163-1829(19990501)59:17<11191:PEDAIS>2.0.ZU;2-I
Abstract
We calculate the photoelectron escape depth in the high-temperature superco nductor Bi2212 by use of electron energy-loss spectroscopy data. We find th at the escape depth is only 3 Angstrom for photon energies typically used i n angle-resolved photoemission measurements. We then use this to estimate t he number of inelastic secondaries, and find this to be quite small near th e Fermi energy. This implies that the large background seen near the Fermi energy in photoemission measurements is of some other origin. [S0163-1829(9 9)08017-0].