Parametric x rays (PXR) produced by bombarding silicon and diamond crystals
with electrons of 30 to 87 MeV were detected at 180 degrees relative to th
e direction of the electron beam. It was found that the dependence of the i
ntensity on the orientation of the crystal agrees with the predictions of t
he kinematical theory of PXR. The absolute intensity is twice as large as p
redicted. These findings can be explained considering dynamical effects tha
t govern the x-ray crystal interaction. Additionally, x,rays caused by self
-diffracted transition radiation have been observed.