Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers

Citation
Me. Bachlechner et al., Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers, PHYS REV L, 84(2), 2000, pp. 322-325
Citations number
28
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
2
Year of publication
2000
Pages
322 - 325
Database
ISI
SICI code
0031-9007(20000110)84:2<322:DEATSN>2.0.ZU;2-P
Abstract
Mechanical behavior of the Si(111)/Si3N4(0001) interface is studied using m illion atom molecular dynamics simulations, At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surf ace and moves toward the interface. The crack does not propagate into the s ilicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the ((1) over bar (1) ove r bar 1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. T ime evolution of the dislocation emission and nature of defects is studied.