Me. Bachlechner et al., Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers, PHYS REV L, 84(2), 2000, pp. 322-325
Mechanical behavior of the Si(111)/Si3N4(0001) interface is studied using m
illion atom molecular dynamics simulations, At a critical value of applied
strain parallel to the interface, a crack forms on the silicon nitride surf
ace and moves toward the interface. The crack does not propagate into the s
ilicon substrate; instead, dislocations are emitted when the crack reaches
the interface. The dislocation loop propagates in the ((1) over bar (1) ove
r bar 1) plane of the silicon substrate with a speed of 500 (+/-100) m/s. T
ime evolution of the dislocation emission and nature of defects is studied.