HIGH-THROUGHPUT OPTICAL DIRECT WRITE LITHOGRAPHY

Citation
J. Paufler et al., HIGH-THROUGHPUT OPTICAL DIRECT WRITE LITHOGRAPHY, Solid state technology, 40(6), 1997, pp. 175
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
40
Issue
6
Year of publication
1997
Database
ISI
SICI code
0038-111X(1997)40:6<175:HODWL>2.0.ZU;2-8
Abstract
This article describes a new system for submicron lithography by fast laser direct writing, where a programmable phase-modulating spatial li ght modulator (SLM) is imaged onto the wafer using flash-on-the-fly-ex posure by an excimer laser. A 512 x 464 pixel SLM has been developed a nd fabricated using a CMOS active matrix with a reflective, deformable viscoelastic reflective layer. A demonstration exposure tool for 0.6- mu m minimum feature size performs all the functions necessary for exp osure of a complete lithographic layer from GDSII CAD layout data. The initial prototype gives good quality 0.6-mu m photoresist patterns. A prototype with an increased throughput of several 150-mm wafers/hr is being designed.