Growth mechanism and quantum confinement effect of silicon nanowires

Authors
Feng, SQ Yu, DP Zhang, HZ Bai, ZG Ding, Y Hang, QL Zou, YH Wang, JJ
Citation
Sq. Feng et al., Growth mechanism and quantum confinement effect of silicon nanowires, SCI CHINA A, 42(12), 1999, pp. 1316-1322
Citations number
18
Categorie Soggetti
Multidisciplinary
Journal title
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
ISSN journal
10016511 → ACNP
Volume
42
Issue
12
Year of publication
1999
Pages
1316 - 1322
Database
ISI
SICI code
1001-6511(199912)42:12<1316:GMAQCE>2.0.ZU;2-R
Abstract
The methods for synthesizing one-dimensional Si nanowires with controlled d iameter are introduced. The mechanism for the growth of Si nanowires and th e growth model for different morphologies of Si nonowires are described, an d the quantum confinement effect of the Si nanowires is presented.