Advanced photolithography developed for the semiconductor industry has been
used to fabricate interdigitated microelectrode arrays that pass steady-st
ate limiting currents of up to 230 nA/mu M analyte - 2.5 times more than th
e most sensitive interdigitated array built to date, and exhibit response t
imes of similar to 5 ms. This performance results from the small interelect
rode gap and the large active area of the device (4 mm(2)), a combination e
nabled by advanced photolithography. We describe the fabrication of these a
rrays and the characterization of their performance in two environments: an
aqueous solution of Ru(NH3)(6)(3+) and a dinitrotoluene solution in aceton
itrile. The scaling of array performance parameters with device dimensions
is also presented. (C) 2000 Elsevier Science S.A. All rights reserved.