Structural transition from CdTe to GdIn2Te4 in films grown by close paced vapor transport combined with free evaporation

In order to obtain CdIn2Te4 thin films, (CdTe)(1-x)(In2Te3)(x) thin films w ere grown on glass substrates by the close spaced vapor transport combined with free evaporation technique (CSVT-FE) using coevaporation of CdTe and I n2Te3. When the saturation limit of In in the CdTe structure is achieved, a CdIn2Te4 thin film is obtained. Indium incorporation is controlled by the temperature of the In2Te3 source. The composition of the films was investig ated by Anger electron spectroscopy and X-ray diffraction was used to evalu ate the structural transition of the films from CdTe (zincblend) to CdIn2Te 4 (tetragonal). Optical characterization by Raman, transmission and photore flectance spectroscopies gave us further evidence of the success in the pro duction of CdIn2Te4 thin films. (C) 2000 Elsevier Science S.A. All rights r eserved.