Citation
Ej. Grier et al., Misfit dislocations of epitaxial (110) niobium parallel to (11(2)over-bar-0) sapphire interfaces grown by molecular beam epitaxy, THIN SOL FI, 358(1-2), 2000, pp. 94-98
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
358
Issue
1-2
Year of publication
2000
Pages
94 - 98
Database
ISI
SICI code
0040-6090(20000110)358:1-2<94:MDOE(N>2.0.ZU;2-U
Abstract
High resolution electron microscopy, HREM, of(110)(Nb)parallel to(<11(2)ove
r bar 0>)(Al2O3) interfaces grown by molecular beam epitaxy, MBE, has confi
rmed that the interface is semicoherent for the films investigated, and tha
t for this orientation misfit dislocations occur at the interface both with
and without stand-off from the interface. The dislocation networks have be
en identified by conventional transmission electron microscopy, CTEM, to be
composed of misfit dislocations with a Burgers vector of 1/2[111], which c
orresponds to the Burgers vector of bulk dislocations in Nb. (C) 2000 Elsev
ier Science S.A. All rights reserved.