Pulsed laser deposition of aluminum tris-8-hydroxyquinline thin films

Citation
Xj. Yang et al., Pulsed laser deposition of aluminum tris-8-hydroxyquinline thin films, THIN SOL FI, 358(1-2), 2000, pp. 187-190
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
358
Issue
1-2
Year of publication
2000
Pages
187 - 190
Database
ISI
SICI code
0040-6090(20000110)358:1-2<187:PLDOAT>2.0.ZU;2-Z
Abstract
Aluminum tris-8-hydroxyquinline (Alq(3)) thin films have been successfully fabricated by 355 nm pulsed laser deposition. Alq(3) films are characterize d via photoluminescence, X-ray diffraction and Fourier transform infrared s pectroscopy. The films deposited using laser fluence of less than 25 mJ/cm( 2) exhibit amorphous feature and maintain the same composition as the origi nal target. Photoluminescence from Alq(3) film obtained in air is efficient and stable. After exposed to humid air (100% relative humidity) for a week , Alq3 films still keep the same composition and crystallinity as the as-de posited film. The stability of Alq(3) film can be improved by poly(vinylcar bazole) doping or depositing in Ar ambient. (C) 2000 Elsevier Science S.A. All rights reserved.