Demonstration of III-V semiconductor-based nonvolatile memory devices

Authors
Pan, ZW Shum, K
Citation
Zw. Pan et K. Shum, Demonstration of III-V semiconductor-based nonvolatile memory devices, APPL PHYS L, 76(4), 2000, pp. 505-507
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
4
Year of publication
2000
Pages
505 - 507
Database
ISI
SICI code
0003-6951(20000124)76:4<505:DOISNM>2.0.ZU;2-A
Abstract
Using the concept for nonvolatile memories recently proposed by K. Shum, J. Q. Zhou, W. Zhang, L. F. Zeng, and M. C. Tamargo [Appl. Phys. Lett. 71, 24 87 (1997)], a promising nonvolatile memory device has been designed and dem onstrated using a III-V semiconductor quantum structure. Preliminary data o n the device's stability and reliability reveals that further improvements are possible on the cycling endurance and retention time. (C) 2000 American Institute of Physics. [S0003-6951(00)01704-6].