Characteristics of CrSi2 and Cr(Ni)Si-2 synthesis in MEVVA ion source implantation and post-annealing processes

We investigate the formation of silicide layers in(111) Si wafers with a hi gh-current implanter. Cr ions form a disilicide layer of low sheet resistan ce. If the sample is also implanted with Ni, the total number of Cr atoms i s reduced by sputtering, and the previously prepared CrSi2 layer is disorde red. However, a stable textured Cr1-xNixSi2 phase can be prepared by proper annealing. Above 1150 degrees C the ternary phase segregates into CrSi2 an d NiSi2. Thus the introduction of Ni can result in well-defined and stable Cr1-xNixSi2 alloys. (C) 2000 Elsevier Science B.V. All rights reserved.