Crystal structure of the low-temperature form and evolution during the phase transition of the electronic properties of a mixed-valence vanadium oxide inserting quinuclidinium cations

Citation
D. Riou et al., Crystal structure of the low-temperature form and evolution during the phase transition of the electronic properties of a mixed-valence vanadium oxide inserting quinuclidinium cations, CHEM MATER, 12(1), 2000, pp. 67-72
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
67 - 72
Database
ISI
SICI code
0897-4756(200001)12:1<67:CSOTLF>2.0.ZU;2-S
Abstract
The layered solid (VV3O10)-V-IV-O-V, NC7H14 is obtained either by thermal d ecomposition of the decavanadate H2V10O28, (NC7H14)(4) or by hydrothermal s ynthesis in the quaternary system V2O5:HF:quinuclidine:H2O. It undergoes a reversible phase transition between 200 and 230 K evidenced by single-cryst al X-ray diffraction, DSC, conductivity, and ESR measurements. The low-temp erature two-dimensional form is orthorhombic ( space group P2(1)cn (no. 33) ) with lattice parameters a = 11.770(2) Angstrom, b = 18.289(4) Angstrom, c = 19.740(4) Angstrom, V= 4249(3) Angstrom(3). The structure was solved fro m 4533 reflections (I greater than or equal to 2 sigma(I)) with reliability factors R1(F-0) = 0.0573 and wR2(F-0(2)) = 0.1572. The ordering of the ami nes in the interlayer space is responsible for the transition and implies s ome changes in the geometry of the layers. The onset of a partial V-IV/V-V Segregation is evidenced, which could explain the different regimes observe d in the ESR and conductivity characteristics above and below the transitio n.