Highly oriented V2O5 nanocrystalline thin films by plasma-enhanced chemical vapor deposition

Citation
D. Barreca et al., Highly oriented V2O5 nanocrystalline thin films by plasma-enhanced chemical vapor deposition, CHEM MATER, 12(1), 2000, pp. 98-103
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMISTRY OF MATERIALS
ISSN journal
08974756 → ACNP
Volume
12
Issue
1
Year of publication
2000
Pages
98 - 103
Database
ISI
SICI code
0897-4756(200001)12:1<98:HOVNTF>2.0.ZU;2-S
Abstract
Plasma-enhanced chemical vapor deposition of vanadium pentoxide thin films from a vanadyl(IV) beta-diketonate compound has been performed in a low-pre ssure reactor under different operating conditions. The effect of various p arameters, such as the: flow rates of the carrier and reactive gas and the substrate temperatures, on films composition, microstructure, and morpholog y was investigated in detail. Controlled variations of the synthesis condit ions allowed a fine modulation of the sample properties, as shown by XRD an d AFM analyses. In particular, at 200 degrees C and moderate oxygen flow, n anophasic V2O5 with a strong (001) preferential orientation could be easily obtained. The composition and purity of the films are studied by XPS and S IMS analyses, with special regard to film-substrate interdiffusion phenomen a. Optical properties of the films are also investigated.