Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si+ ions into gallium arsenide and subsequent 10-mi n annealing in arsine at 850 degrees C have been studied by the triple-crys tal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diff usion of introduced dopants into the substrate surface can significantly af fect the distribution profile of the dopant in the course of preparation of thin implanted layers.