A class-E power amplifier based on an extended resonance technique

Authors
Martin, AL Mortazawi, A
Citation
Al. Martin et A. Mortazawi, A class-E power amplifier based on an extended resonance technique, IEEE MICR T, 48(1), 2000, pp. 93-97
Citations number
16
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
48
Issue
1
Year of publication
2000
Pages
93 - 97
Database
ISI
SICI code
0018-9480(200001)48:1<93:ACPABO>2.0.ZU;2-U
Abstract
In this paper, a class-E power amplifier using four 1-W GaAs MESFET's at 93 5 MHz is demonstrated using a new extended resonance power-combining techni que. A microstrip amplifier based on this technique was designed and fabric ated which combines four 1-W Siemens CLY5 GaAs MESFET's with 67% power-adde d efficiency at 935 MHz.