We have measured the low temperature internal friction (Q(-1)) of amor
phous silicon (a-Si) films. e-beam evaporation or Si-28(+) implantatio
n leads to the temperature-independent Q(0)(-1) plateau common to all
amorphous solids. For hydrogenated amorphous silicon with 1 at. %H pro
duced by hot wire chemical vapor deposition, however, Q(0)(-1) is over
200 times smaller than for e-beam a-Si. This is the first observation
of an amorphous solid without any significant low energy excitations.
It offers the opportunity to study amorphous solids containing contro
lled densities of tunneling defects, and thus to explore their nature.