Raman scattering characterization of Si(100) implanted with mega-electron-volt Sb

Dose dependent structural modifications in Si(100) due to 1.5 MeV implantat ion of Sb have been characterized using Raman spectroscopy and Rutherford b ackscattering spectrometry/channeling (RBS/C) techniques. With increasing f luence, an intensity reduction of the first order Raman peak, characteristi c of crystalline Si, is observed. The amorphicity in Si lattice appears at a dose of 1 x 10(13) ions/cm(2) and it increases with each dose. For a dose of 5 x 10(14) ions/cm(2) the Raman spectrum resembles that of amorphous Si . RBS/C studies also support a fully amorphized lattice at this dose though for smaller doses it suggests lower disorder. For the fluences of 1 x 10(1 3) and 1 x 10(14) ions/cm(2) a coexistence of undamaged crystalline Si regi ons and amorphous zones is observed. Consequently, phonon confinement is ob served. Lattice recovery achieved by subsequent annealing has also been inv estigated using Raman spectroscopy. By annealing at 600 degrees C, sample c rystallinity is fully recovered in all the cases up to the fluence of 5 x 1 0(14) ions/cm(2). For higher doses small amorphicity still remains. Depth d ependent measurements of the shifts in the Raman peaks demonstrate a gradie nt in stress which is of compressive nature near the surface region but is tensile in deeper layers. Maximum stress in the lattice appears for a dose of 1x10(12) ions/cm(2) which gets relaxed by the incorporation of amorphous zones at higher fluences. (C) 2000 American Institute of Physics. [S0021-8 979(00)00403-5].